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Long-lived intermediate state in strain-confined quantum dotsYITONG GU; STURGE, M. D; KASH, K et al.Superlattices and microstructures. 1996, Vol 19, Num 2, pp 131-136, issn 0749-6036Article

Superlattice transport in intense terahertz electric fieldsKEAY, B. J; GUIMARAES, P. S. S; KAMINSKI, J. P et al.Surface science. 1994, Vol 305, Num 1-3, pp 385-388, issn 0039-6028Conference Paper

Low threshold buried heterostructure vertical cavity surface emitting laserCHANG-HASNAIN, C. J; WU, Y. A; LI, G. S et al.Applied physics letters. 1993, Vol 63, Num 10, pp 1307-1309, issn 0003-6951Article

Photon-mediated sequential resonant tunneling in intense terahertz electric fieldsGUIMARAES, P. S. S; KEAY, B. J; KAMINSKI, J. P et al.Physical review letters. 1993, Vol 70, Num 24, pp 3792-3795, issn 0031-9007Article

Photoelastic waveguides formed by interfacial reactionsYU, L. S; GUAN, Z. F; XIA, W et al.Applied physics letters. 1993, Vol 62, Num 23, pp 2944-2946, issn 0003-6951Article

Mode-locked all-solid-state diode-pumped Cr:LiSAF laserFRENCH, P. M. W; MELLISH, R; TAYLOR, J. R et al.Optics letters. 1993, Vol 18, Num 22, pp 1934-1936, issn 0146-9592Article

Dramatic work function variations of molecular-beam epitaxially grown GaAs(100) surfacesDUSZAK, R; PALMSTRØM, C. J; FLOREZ, L. T et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 4, pp 1891-1897, issn 0734-211XConference Paper

Fabrication of vertical-cavity front-surface-emitting laser diode (FSELD) using a heterojunction bipolar transistor processHOI-JUN YOO; HAYES, J. R; ANDREADAKIS, N et al.Japanese journal of applied physics. 1991, Vol 30, Num 3B, pp L492-L494, issn 0021-4922, 2Article

Rastered, uniformly separated wavelengths emitted from a two-dimensional vertical-cavity surface-emitting laser arrayCHANG-HASNAIN, C. J; WULLERT, J. R; HARBISON, J. P et al.Applied physics letters. 1991, Vol 58, Num 1, pp 31-33, issn 0003-6951, 3 p.Article

MBE growth of ferromagnetic metastable epitaxial MnAl thin films on AlAs/GaAs heterostructuresHARBISON, J. P; SANDS, T; RAMESH, R et al.Journal of crystal growth. 1991, Vol 111, Num 1-4, pp 978-983, issn 0022-0248Conference Paper

Positive and negative resistlesslithography of GaAs by electron beam exposure and thermal Cl₂ etchingCLAUSEN, E. M; HARBISON, J. P; CHANG, C. C et al.Applied physics letters. 1990, Vol 57, Num 10, pp 1043-1045, issn 0003-6951, 3 p.Article

Surface emitting laser arrays with uniformly separated wavelengthsCHANG-HASNAIN, C. J; MAEDA, M. W; STOFFEL, N. G et al.Electronics Letters. 1990, Vol 26, Num 13, pp 940-942, issn 0013-5194, 3 p.Article

Transverse mode characteristics of vertical cavity surface-emitting lasersCHANG-HASNAIN, C. J; ORENSTEIN, M; VON LEHMEN, A et al.Applied physics letters. 1990, Vol 57, Num 3, pp 218-220, issn 0003-6951Article

Measurements of the electron-hole binding energy in coupled GaAs/AlGaAs quantum wellsGOLUB, J. E; LIAO, P. F; EILENBERGER, D. J et al.Solid state communications. 1989, Vol 72, Num 8, pp 735-738, issn 0038-1098Article

Resonant tunneling through magnetic edge statesPEETERS, F. M; HELM, M; ENGLAND, P et al.Solid-state electronics. 1989, Vol 32, Num 12, pp 1309-1313, issn 0038-1101Conference Paper

Oscillations in the optical response of (001)GaAs and AlGaAs surfaces during crystal growth by molecular beam epitaxyHARBISON, J. P; ASPNES, D. E; STUDNA, A. A et al.Applied physics letters. 1988, Vol 52, Num 24, pp 2046-2048, issn 0003-6951Article

Reflectance-difference spectroscopy system for real-time measurements of crystal growthASPNES, D. E; HARBISON, J. P; STUDNA, A. A et al.Applied physics letters. 1988, Vol 52, Num 12, pp 957-959, issn 0003-6951Article

Type I-type II anticrossing and enhanced Stark effect in asymmetric coupled quantum wellsGOLUB, J. E; LIAO, P. F; EILENBERGER, D. J et al.Applied physics letters. 1988, Vol 53, Num 26, pp 2584-2586, issn 0003-6951Article

Temperature dependent time-resolved exciton luminescence in GaAs/AlGaAs quantum wires and dotsYONG ZHANG; STURGE, M. D; KASH, K et al.Superlattices and microstructures. 1995, Vol 17, Num 2, pp 201-212, issn 0749-6036Article

All-solid-state diode-pumped modelocked Cr:LiSAF laserFRENCH, P. M. W; MELLISH, R; TAYLOR, J. R et al.Electronics Letters. 1993, Vol 29, Num 14, pp 1262-1263, issn 0013-5194Article

Surface science at atmospheric pressure : reconstruction on (001) Gaas in organometallic chemical vapor depositionKAMIYA, I; ASPNES, D. E; TANAKA, H et al.Physical review letters. 1992, Vol 68, Num 5, pp 627-630, issn 0031-9007Article

Dimer formation on (001) GaAs under organometallic chemical vapor deposition growth conditionsKAMIYA, I; ASPNES, D. E; TANAKA, H et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 4, pp 1716-1719, issn 0734-211XConference Paper

Optically monitoring and controlling epitaxial growthASPNES, D. E; BHAT, R; PUDENSI, M. A. A et al.Journal of crystal growth. 1992, Vol 120, Num 1-4, pp 71-77, issn 0022-0248Conference Paper

Indirect excitons in coupled quantum well structuresZRENNER, A; LEEB, P; SCHÄFER, J et al.Surface science. 1992, Vol 263, Num 1-3, pp 496-501, issn 0039-6028Conference Paper